SQJ262EP-T1_GE3 Pricing (USD) [158402pcs Stock]
- 1 pcs$0.23350
- Part Number:
- SQJ262EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Transistors - JFETs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQJ262EP-T1_GE3 electronic components. SQJ262EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ262EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ262EP-T1_GE3 Product Attributes
Part Number :
SQJ262EP-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 60V POWERPAK SO8
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
15A (Tc), 40A (Tc)
Rds On (Max) @ Id, Vgs :
35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V, 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 25V, 1260pF @ 25V
Power - Max :
27W (Tc), 48W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
PowerPAK® SO-8 Dual
Supplier Device Package :
PowerPAK® SO-8 Dual Asymmetric
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