Toshiba Semiconductor and Storage - SSM6N7002BFE,LM

KEY Part #: K6525538

SSM6N7002BFE,LM Pricing (USD) [1694228pcs Stock]

  • 1 pcs$0.02413
  • 4,000 pcs$0.02401

Part Number:
SSM6N7002BFE,LM
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET 2N-CH 60V 0.2A ES6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Diodes - Rectifiers - Arrays and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6N7002BFE,LM electronic components. SSM6N7002BFE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N7002BFE,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N7002BFE,LM Product Attributes

Part Number : SSM6N7002BFE,LM
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET 2N-CH 60V 0.2A ES6
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200mA
Rds On (Max) @ Id, Vgs : 2.1 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 17pF @ 25V
Power - Max : 150mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6

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