SIZF906ADT-T1-GE3 Pricing (USD) [122423pcs Stock]
- 1 pcs$0.30213
- Part Number:
- SIZF906ADT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET DUAL N-CHAN 30V.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - RF, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZF906ADT-T1-GE3 electronic components. SIZF906ADT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF906ADT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF906ADT-T1-GE3 Product Attributes
Part Number :
SIZF906ADT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL N-CHAN 30V
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual), Schottky
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V, 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 15V, 8200pF @ 15V
Power - Max :
4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-PowerPair® (6x5)
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