Vishay Siliconix - SI5513CDC-T1-GE3

KEY Part #: K6525445

SI5513CDC-T1-GE3 Pricing (USD) [383787pcs Stock]

  • 1 pcs$0.09638
  • 3,000 pcs$0.09104

Part Number:
SI5513CDC-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N/P-CH 20V 4A 1206-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI5513CDC-T1-GE3 Product Attributes

Part Number : SI5513CDC-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N/P-CH 20V 4A 1206-8
Series : TrenchFET®
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A, 3.7A
Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 285pF @ 10V
Power - Max : 3.1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SMD, Flat Lead
Supplier Device Package : 1206-8 ChipFET™