Infineon Technologies - BSG0813NDIATMA1

KEY Part #: K6525146

BSG0813NDIATMA1 Pricing (USD) [91750pcs Stock]

  • 1 pcs$0.42617
  • 5,000 pcs$0.41930

Part Number:
BSG0813NDIATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET 2N-CH 25V 19A/33A 8TISON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - IGBTs - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSG0813NDIATMA1 Product Attributes

Part Number : BSG0813NDIATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 25V 19A/33A 8TISON
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 19A, 33A
Rds On (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 12V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 155°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : PG-TISON-8