Vishay Siliconix - SIZ910DT-T1-GE3

KEY Part #: K6523926

SIZ910DT-T1-GE3 Pricing (USD) [4002pcs Stock]

  • 3,000 pcs$0.39736

Part Number:
SIZ910DT-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 30V 40A POWERPAIR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Diodes - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Siliconix SIZ910DT-T1-GE3 electronic components. SIZ910DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ910DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ910DT-T1-GE3 Product Attributes

Part Number : SIZ910DT-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 30V 40A POWERPAIR
Series : TrenchFET®
Part Status : Obsolete
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 40A
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 15V
Power - Max : 48W, 100W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerWDFN
Supplier Device Package : 8-PowerPair® (6x5)

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