Toshiba Semiconductor and Storage - TPC8223-H,LQ(S

KEY Part #: K6525345

TPC8223-H,LQ(S Pricing (USD) [212065pcs Stock]

  • 1 pcs$0.19282
  • 2,500 pcs$0.19186

Part Number:
TPC8223-H,LQ(S
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET 2N-CH 30V 9A 8SOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPC8223-H,LQ(S electronic components. TPC8223-H,LQ(S can be shipped within 24 hours after order. If you have any demands for TPC8223-H,LQ(S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPC8223-H,LQ(S Product Attributes

Part Number : TPC8223-H,LQ(S
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET 2N-CH 30V 9A 8SOP
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9A
Rds On (Max) @ Id, Vgs : 17 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1190pF @ 10V
Power - Max : 450mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOP