Infineon Technologies - IPG20N04S4L08AATMA1

KEY Part #: K6525271

IPG20N04S4L08AATMA1 Pricing (USD) [161546pcs Stock]

  • 1 pcs$0.22896
  • 5,000 pcs$0.21004

Part Number:
IPG20N04S4L08AATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET 2N-CH 8TDSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Programmable Unijunction and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IPG20N04S4L08AATMA1 electronic components. IPG20N04S4L08AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N04S4L08AATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPG20N04S4L08AATMA1 Product Attributes

Part Number : IPG20N04S4L08AATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 8TDSON
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 20A
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3050pF @ 25V
Power - Max : 54W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PG-TDSON-8-10