BSC072N03LDGATMA1 Pricing (USD) [160653pcs Stock]
- 1 pcs$0.23023
- Part Number:
- BSC072N03LDGATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 30V 11.5A 8TDSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSC072N03LDGATMA1 electronic components. BSC072N03LDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC072N03LDGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC072N03LDGATMA1 Product Attributes
Part Number :
BSC072N03LDGATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 30V 11.5A 8TDSON
Series :
OptiMOS™
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
11.5A
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 15V
Power - Max :
57W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerVDFN
Supplier Device Package :
PG-TDSON-8 Dual
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