BSG0810NDIATMA1 Pricing (USD) [83416pcs Stock]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Part Number:
- BSG0810NDIATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Product Attributes
Part Number :
BSG0810NDIATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 25V 19A/39A 8TISON
Series :
OptiMOS™
Part Status :
Active
FET Type :
2 N-Channel (Dual) Asymmetrical
FET Feature :
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
19A, 39A
Rds On (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1040pF @ 12V
Power - Max :
2.5W
Operating Temperature :
-55°C ~ 155°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerTDFN
Supplier Device Package :
PG-TISON-8
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