DMTH10H010LCT Pricing (USD) [51668pcs Stock]
- 1 pcs$0.71495
- 50 pcs$0.57489
- 100 pcs$0.51740
- 500 pcs$0.40242
- 1,000 pcs$0.31541
- Part Number:
- DMTH10H010LCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET 100V 108A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH10H010LCT electronic components. DMTH10H010LCT can be shipped within 24 hours after order. If you have any demands for DMTH10H010LCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH10H010LCT Product Attributes
Part Number :
DMTH10H010LCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET 100V 108A TO220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2592pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.4W (Ta), 166W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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