SIZ926DT-T1-GE3 Pricing (USD) [162374pcs Stock]
- 1 pcs$0.22893
- 3,000 pcs$0.22779
- Part Number:
- SIZ926DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2 N-CH 25V 8-POWERPAIR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Diodes - Zener - Single, Thyristors - SCRs - Modules and Diodes - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZ926DT-T1-GE3 electronic components. SIZ926DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ926DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ926DT-T1-GE3 Product Attributes
Part Number :
SIZ926DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 25V 8-POWERPAIR
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
40A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs :
4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V, 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
925pF @ 10V, 2150pF @ 10V
Power - Max :
20.2W, 40W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-PowerPair® (6x5)
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