DMP1012UCB9-7 Pricing (USD) [263135pcs Stock]
- 1 pcs$0.14056
- 3,000 pcs$0.12490
- Part Number:
- DMP1012UCB9-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET P-CH 8V 10A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMP1012UCB9-7 electronic components. DMP1012UCB9-7 can be shipped within 24 hours after order. If you have any demands for DMP1012UCB9-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMP1012UCB9-7 Product Attributes
Part Number :
DMP1012UCB9-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET P-CH 8V 10A
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
8V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10.5nC @ 4.5V
Vgs (Max) :
-6V
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 4V
FET Feature :
-
Power Dissipation (Max) :
890mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
U-WLB1515-9
Package / Case :
9-UFBGA, WLBGA
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