[3550pcs Stock]
- Part Number:
- PSMN8R5-108ESQ
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 108V 100A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Thyristors - SCRs - Modules and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PSMN8R5-108ESQ electronic components. PSMN8R5-108ESQ can be shipped within 24 hours after order. If you have any demands for PSMN8R5-108ESQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN8R5-108ESQ Product Attributes
Part Number :
PSMN8R5-108ESQ
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 108V 100A I2PAK
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
108V
Current - Continuous Drain (Id) @ 25°C :
100A (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
111nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5512pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
263W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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