Toshiba Semiconductor and Storage - SSM6N16FUTE85LF

KEY Part #: K6523119

SSM6N16FUTE85LF Pricing (USD) [1230545pcs Stock]

  • 1 pcs$0.03006

Part Number:
SSM6N16FUTE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET 2N-CH 20V 0.1A US6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6N16FUTE85LF electronic components. SSM6N16FUTE85LF can be shipped within 24 hours after order. If you have any demands for SSM6N16FUTE85LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N16FUTE85LF Product Attributes

Part Number : SSM6N16FUTE85LF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET 2N-CH 20V 0.1A US6
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 100mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.3pF @ 3V
Power - Max : 200mW
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6