[2225pcs Stock]
- Part Number:
- SSM3K318T,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 60V 2.5A TSM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3K318T,LF electronic components. SSM3K318T,LF can be shipped within 24 hours after order. If you have any demands for SSM3K318T,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K318T,LF Product Attributes
Part Number :
SSM3K318T,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 60V 2.5A TSM
Series :
U-MOSIV
Part Status :
Discontinued at Digi-Key
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
107 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
235pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TSM
Package / Case :
TO-236-3, SC-59, SOT-23-3
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