EPC2110ENGRT Pricing (USD) [91507pcs Stock]
- 1 pcs$0.45551
- 2,500 pcs$0.45324
- Part Number:
- EPC2110ENGRT
- Manufacturer:
- EPC
- Detailed description:
- GAN TRANS 2N-CH 120V BUMPED DIE.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Thyristors - TRIACs, Thyristors - SCRs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in EPC EPC2110ENGRT electronic components. EPC2110ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2110ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2110ENGRT Product Attributes
Part Number :
EPC2110ENGRT
Manufacturer :
EPC
Description :
GAN TRANS 2N-CH 120V BUMPED DIE
Series :
eGaN®
Part Status :
Active
FET Type :
2 N-Channel (Dual) Common Source
FET Feature :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
120V
Current - Continuous Drain (Id) @ 25°C :
3.4A
Rds On (Max) @ Id, Vgs :
60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id :
2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
80pF @ 60V
Power - Max :
-
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
Die
Supplier Device Package :
Die
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