SIZ900DT-T1-GE3 Pricing (USD) [3690pcs Stock]
- 3,000 pcs$0.33301
- Part Number:
- SIZ900DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2N-CH 30V 24A POWERPAIR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZ900DT-T1-GE3 electronic components. SIZ900DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ900DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ900DT-T1-GE3 Product Attributes
Part Number :
SIZ900DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 30V 24A POWERPAIR
Series :
TrenchFET®
Part Status :
Obsolete
FET Type :
2 N-Channel (Half Bridge)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
24A, 28A
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 15V
Power - Max :
48W, 100W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-PowerPair™
Supplier Device Package :
6-PowerPair™
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