DMN61D8LVTQ-13 Pricing (USD) [518699pcs Stock]
- 1 pcs$0.07131
- 10,000 pcs$0.06284
- Part Number:
- DMN61D8LVTQ-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET 2N-CH 60V 0.63A TSOT26.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - Special Purpose, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN61D8LVTQ-13 electronic components. DMN61D8LVTQ-13 can be shipped within 24 hours after order. If you have any demands for DMN61D8LVTQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D8LVTQ-13 Product Attributes
Part Number :
DMN61D8LVTQ-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET 2N-CH 60V 0.63A TSOT26
Series :
-
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
630mA
Rds On (Max) @ Id, Vgs :
1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
12.9pF @ 12V
Power - Max :
820mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package :
TSOT-26
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