NXP USA Inc. - PMT200EN,115

KEY Part #: K6400003

[3548pcs Stock]


    Part Number:
    PMT200EN,115
    Manufacturer:
    NXP USA Inc.
    Detailed description:
    MOSFET N-CH 100V 1.8A SC-73.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Thyristors - TRIACs, Transistors - JFETs, Diodes - Zener - Single and Transistors - IGBTs - Single ...
    Competitive Advantage:
    We specialize in NXP USA Inc. PMT200EN,115 electronic components. PMT200EN,115 can be shipped within 24 hours after order. If you have any demands for PMT200EN,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMT200EN,115 Product Attributes

    Part Number : PMT200EN,115
    Manufacturer : NXP USA Inc.
    Description : MOSFET N-CH 100V 1.8A SC-73
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 235 mOhm @ 1.5A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 80V
    FET Feature : -
    Power Dissipation (Max) : 800mW (Ta), 8.3W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-223
    Package / Case : TO-261-4, TO-261AA

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