TPH3208PD Pricing (USD) [8659pcs Stock]
- 1 pcs$4.75956
- Part Number:
- TPH3208PD
- Manufacturer:
- Transphorm
- Detailed description:
- GANFET N-CH 650V 20A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Transphorm TPH3208PD electronic components. TPH3208PD can be shipped within 24 hours after order. If you have any demands for TPH3208PD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3208PD Product Attributes
Part Number :
TPH3208PD
Manufacturer :
Transphorm
Description :
GANFET N-CH 650V 20A TO220
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id :
2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 8V
Vgs (Max) :
±18V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
96W (Tc)
Operating Temperature :
-55°C ~ 150°C
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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