Global Power Technologies Group - GP2M010A060F

KEY Part #: K6402579

GP2M010A060F Pricing (USD) [2655pcs Stock]

  • 1 pcs$0.95327

Part Number:
GP2M010A060F
Manufacturer:
Global Power Technologies Group
Detailed description:
MOSFET N-CH 600V 10A TO220F.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Diodes - RF, Power Driver Modules, Thyristors - SCRs and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Global Power Technologies Group GP2M010A060F electronic components. GP2M010A060F can be shipped within 24 hours after order. If you have any demands for GP2M010A060F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GP2M010A060F Product Attributes

Part Number : GP2M010A060F
Manufacturer : Global Power Technologies Group
Description : MOSFET N-CH 600V 10A TO220F
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 700 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1660pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack

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