TPH3207WS Pricing (USD) [2717pcs Stock]
- 1 pcs$14.57542
- 10 pcs$13.48249
- 100 pcs$11.51458
- Part Number:
- TPH3207WS
- Manufacturer:
- Transphorm
- Detailed description:
- GANFET N-CH 650V 50A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Transphorm TPH3207WS electronic components. TPH3207WS can be shipped within 24 hours after order. If you have any demands for TPH3207WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3207WS Product Attributes
Part Number :
TPH3207WS
Manufacturer :
Transphorm
Description :
GANFET N-CH 650V 50A TO247
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
41 mOhm @ 32A, 8V
Vgs(th) (Max) @ Id :
2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 8V
Vgs (Max) :
±18V
Input Capacitance (Ciss) (Max) @ Vds :
2197pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
178W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3
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