Nexperia USA Inc. - PMV45EN2VL

KEY Part #: K6421616

PMV45EN2VL Pricing (USD) [1056857pcs Stock]

  • 1 pcs$0.03524
  • 10,000 pcs$0.03507

Part Number:
PMV45EN2VL
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 30V 5.1A TO236AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PMV45EN2VL electronic components. PMV45EN2VL can be shipped within 24 hours after order. If you have any demands for PMV45EN2VL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMV45EN2VL Product Attributes

Part Number : PMV45EN2VL
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 30V 5.1A TO236AB
Series : TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 42 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.3nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 209pF @ 15V
FET Feature : -
Power Dissipation (Max) : 510mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-236AB
Package / Case : TO-236-3, SC-59, SOT-23-3