Taiwan Semiconductor Corporation - TSM4NB60CH X0G

KEY Part #: K6396251

TSM4NB60CH X0G Pricing (USD) [309611pcs Stock]

  • 1 pcs$0.11946

Part Number:
TSM4NB60CH X0G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET N-CHANNEL 600V 4A TO251.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - Special Purpose and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM4NB60CH X0G electronic components. TSM4NB60CH X0G can be shipped within 24 hours after order. If you have any demands for TSM4NB60CH X0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM4NB60CH X0G Product Attributes

Part Number : TSM4NB60CH X0G
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CHANNEL 600V 4A TO251
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-251 (IPAK)
Package / Case : TO-251-3 Stub Leads, IPak