Rohm Semiconductor - RS1E350BNTB

KEY Part #: K6394137

RS1E350BNTB Pricing (USD) [137196pcs Stock]

  • 1 pcs$0.29804
  • 2,500 pcs$0.29656

Part Number:
RS1E350BNTB
Manufacturer:
Rohm Semiconductor
Detailed description:
MOSFET N-CH 30V 35A 8HSOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Diodes - Zener - Single, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Rohm Semiconductor RS1E350BNTB electronic components. RS1E350BNTB can be shipped within 24 hours after order. If you have any demands for RS1E350BNTB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1E350BNTB Product Attributes

Part Number : RS1E350BNTB
Manufacturer : Rohm Semiconductor
Description : MOSFET N-CH 30V 35A 8HSOP
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 185nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7900pF @ 15V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-HSOP
Package / Case : 8-PowerTDFN

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