Toshiba Semiconductor and Storage - SSM6J207FE,LF

KEY Part #: K6421546

SSM6J207FE,LF Pricing (USD) [776433pcs Stock]

  • 1 pcs$0.05267
  • 4,000 pcs$0.05240

Part Number:
SSM6J207FE,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P-CH 30V 1.4A ES6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6J207FE,LF electronic components. SSM6J207FE,LF can be shipped within 24 hours after order. If you have any demands for SSM6J207FE,LF, Please submit a Request for Quotation here or send us an email:
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ISO-13485
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SSM6J207FE,LF Product Attributes

Part Number : SSM6J207FE,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 30V 1.4A ES6
Series : U-MOSII
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 251 mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id : 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 137pF @ 15V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : ES6 (1.6x1.6)
Package / Case : SOT-563, SOT-666