TSM650P03CX RFG Pricing (USD) [1012793pcs Stock]
- 1 pcs$0.03652
- Part Number:
- TSM650P03CX RFG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET P-CHANNEL 30V 4.1A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM650P03CX RFG electronic components. TSM650P03CX RFG can be shipped within 24 hours after order. If you have any demands for TSM650P03CX RFG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM650P03CX RFG Product Attributes
Part Number :
TSM650P03CX RFG
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET P-CHANNEL 30V 4.1A SOT23
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.4nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
810pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
1.56W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23
Package / Case :
TO-236-3, SC-59, SOT-23-3
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