TK28N65W,S1F Pricing (USD) [16378pcs Stock]
- 1 pcs$2.76760
- 30 pcs$2.22509
- 120 pcs$2.02729
- 510 pcs$1.64163
- 1,020 pcs$1.38450
- Part Number:
- TK28N65W,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 650V 27.6A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK28N65W,S1F electronic components. TK28N65W,S1F can be shipped within 24 hours after order. If you have any demands for TK28N65W,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK28N65W,S1F Product Attributes
Part Number :
TK28N65W,S1F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 27.6A TO247
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
230W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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