IXFY4N60P3 Pricing (USD) [58086pcs Stock]
- 1 pcs$0.74004
- 10 pcs$0.66980
- 100 pcs$0.53809
- 500 pcs$0.41852
- 1,000 pcs$0.32803
- Part Number:
- IXFY4N60P3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 4A TO-252.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFY4N60P3 electronic components. IXFY4N60P3 can be shipped within 24 hours after order. If you have any demands for IXFY4N60P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFY4N60P3 Product Attributes
Part Number :
IXFY4N60P3
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 4A TO-252
Series :
HiPerFET™, Polar3™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.9nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
365pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
114W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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