IXYS - IXFH86N30T

KEY Part #: K6416350

IXFH86N30T Pricing (USD) [14035pcs Stock]

  • 1 pcs$3.24594
  • 90 pcs$3.22979

Part Number:
IXFH86N30T
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 300V 86A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in IXYS IXFH86N30T electronic components. IXFH86N30T can be shipped within 24 hours after order. If you have any demands for IXFH86N30T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH86N30T Product Attributes

Part Number : IXFH86N30T
Manufacturer : IXYS
Description : MOSFET N-CH 300V 86A TO-247
Series : HiPerFET™, TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 300V
Current - Continuous Drain (Id) @ 25°C : 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 43 mOhm @ 43A, 10V
Vgs(th) (Max) @ Id : 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 11300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 860W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AD (IXFH)
Package / Case : TO-247-3