Toshiba Semiconductor and Storage - TPC8067-H,LQ(S

KEY Part #: K6421103

TPC8067-H,LQ(S Pricing (USD) [348634pcs Stock]

  • 1 pcs$0.11729
  • 2,500 pcs$0.11670

Part Number:
TPC8067-H,LQ(S
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 30V 9A 8SOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPC8067-H,LQ(S electronic components. TPC8067-H,LQ(S can be shipped within 24 hours after order. If you have any demands for TPC8067-H,LQ(S, Please submit a Request for Quotation here or send us an email:
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TPC8067-H,LQ(S Product Attributes

Part Number : TPC8067-H,LQ(S
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 30V 9A 8SOP
Series : U-MOSVII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 690pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP
Package / Case : 8-SOIC (0.154", 3.90mm Width)

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