Taiwan Semiconductor Corporation - TSM4NB60CZ C0G

KEY Part #: K6401250

[3115pcs Stock]


    Part Number:
    TSM4NB60CZ C0G
    Manufacturer:
    Taiwan Semiconductor Corporation
    Detailed description:
    MOSFET N-CHANNEL 600V 4A TO220.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Rectifiers - Arrays ...
    Competitive Advantage:
    We specialize in Taiwan Semiconductor Corporation TSM4NB60CZ C0G electronic components. TSM4NB60CZ C0G can be shipped within 24 hours after order. If you have any demands for TSM4NB60CZ C0G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TSM4NB60CZ C0G Product Attributes

    Part Number : TSM4NB60CZ C0G
    Manufacturer : Taiwan Semiconductor Corporation
    Description : MOSFET N-CHANNEL 600V 4A TO220
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 2A, 10V
    Vgs(th) (Max) @ Id : 4.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 14.5nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 500pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 50W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220
    Package / Case : TO-220-3

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