TK3R1E04PL,S1X Pricing (USD) [53747pcs Stock]
- 1 pcs$0.80275
- 50 pcs$0.64622
- 100 pcs$0.58158
- 500 pcs$0.45233
- 1,000 pcs$0.37478
- Part Number:
- TK3R1E04PL,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - JFETs and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK3R1E04PL,S1X electronic components. TK3R1E04PL,S1X can be shipped within 24 hours after order. If you have any demands for TK3R1E04PL,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK3R1E04PL,S1X Product Attributes
Part Number :
TK3R1E04PL,S1X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X35 PB-F POWER MOSFET TRANSISTOR
Series :
U-MOSIX-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id :
2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
63.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4670pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
87W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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