Infineon Technologies - IPP029N06NAKSA1

KEY Part #: K6398407

IPP029N06NAKSA1 Pricing (USD) [36530pcs Stock]

  • 1 pcs$1.02853
  • 10 pcs$0.92735
  • 100 pcs$0.74505
  • 500 pcs$0.57949
  • 1,000 pcs$0.48015

Part Number:
IPP029N06NAKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 24A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP029N06NAKSA1 Product Attributes

Part Number : IPP029N06NAKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 24A TO220
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4100pF @ 30V
FET Feature : -
Power Dissipation (Max) : 3W (Ta), 136W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3
Package / Case : TO-220-3

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