[2220pcs Stock]
- Part Number:
- HN4K03JUTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 20V 0.1A USV.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - JFETs, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage HN4K03JUTE85LF electronic components. HN4K03JUTE85LF can be shipped within 24 hours after order. If you have any demands for HN4K03JUTE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4K03JUTE85LF Product Attributes
Part Number :
HN4K03JUTE85LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 20V 0.1A USV
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V
Rds On (Max) @ Id, Vgs :
12 Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
8.5pF @ 3V
FET Feature :
-
Power Dissipation (Max) :
200mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
USV
Package / Case :
5-TSSOP, SC-70-5, SOT-353
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