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  5. FDN338P_G

ON Semiconductor - FDN338P_G

KEY Part #: K6403878

[2205pcs Stock]

    Part Number:
    FDN338P_G
    Manufacturer:
    ON Semiconductor
    Detailed description:
    INTEGRATED CIRCUIT.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Arrays ...
    Competitive Advantage:
    We specialize in ON Semiconductor FDN338P_G electronic components. FDN338P_G can be shipped within 24 hours after order. If you have any demands for FDN338P_G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDN338P_G Product Attributes

    Part Number : FDN338P_G
    Manufacturer : ON Semiconductor
    Description : INTEGRATED CIRCUIT
    Series : PowerTrench®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 1.6A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 115 mOhm @ 1.6A, 4.5V
    Vgs(th) (Max) @ Id : 1.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : 451pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 500mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SuperSOT-3
    Package / Case : TO-236-3, SC-59, SOT-23-3

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