BSS7728NH6327XTSA1 Pricing (USD) [1632991pcs Stock]
- 1 pcs$0.02675
- 3,000 pcs$0.02662
- Part Number:
- BSS7728NH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 60V 200MA SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Thyristors - SCRs, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSS7728NH6327XTSA1 electronic components. BSS7728NH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSS7728NH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS7728NH6327XTSA1 Product Attributes
Part Number :
BSS7728NH6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 200MA SOT23
Series :
SIPMOS®
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
2.3V @ 26µA
Gate Charge (Qg) (Max) @ Vgs :
1.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
56pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
360mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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