Infineon Technologies - AUIRFR5410

KEY Part #: K6399886

AUIRFR5410 Pricing (USD) [50279pcs Stock]

  • 1 pcs$0.71495
  • 10 pcs$0.64387
  • 100 pcs$0.51740
  • 500 pcs$0.40242
  • 1,000 pcs$0.31541

Part Number:
AUIRFR5410
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET P-CH 100V 13A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Infineon Technologies AUIRFR5410 electronic components. AUIRFR5410 can be shipped within 24 hours after order. If you have any demands for AUIRFR5410, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRFR5410 Product Attributes

Part Number : AUIRFR5410
Manufacturer : Infineon Technologies
Description : MOSFET P-CH 100V 13A DPAK
Series : HEXFET®
Part Status : Not For New Designs
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 205 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 25V
FET Feature : -
Power Dissipation (Max) : 66W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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