R6025FNZC8 Pricing (USD) [16611pcs Stock]
- 1 pcs$2.72793
- 10 pcs$2.43619
- 100 pcs$1.99752
- 500 pcs$1.61748
- 1,000 pcs$1.36414
- Part Number:
- R6025FNZC8
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 600V 25A TO3PF.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose, Transistors - IGBTs - Single, Power Driver Modules, Thyristors - SCRs, Diodes - Bridge Rectifiers and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor R6025FNZC8 electronic components. R6025FNZC8 can be shipped within 24 hours after order. If you have any demands for R6025FNZC8, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6025FNZC8 Product Attributes
Part Number :
R6025FNZC8
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 600V 25A TO3PF
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PF
Package / Case :
TO-3P-3 Full Pack
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