NXP USA Inc. - PSMN3R9-60XSQ

KEY Part #: K6399999

[3550pcs Stock]


    Part Number:
    PSMN3R9-60XSQ
    Manufacturer:
    NXP USA Inc.
    Detailed description:
    MOSFET N-CH 60V 75A TO-220F.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Power Driver Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - Single ...
    Competitive Advantage:
    We specialize in NXP USA Inc. PSMN3R9-60XSQ electronic components. PSMN3R9-60XSQ can be shipped within 24 hours after order. If you have any demands for PSMN3R9-60XSQ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PSMN3R9-60XSQ Product Attributes

    Part Number : PSMN3R9-60XSQ
    Manufacturer : NXP USA Inc.
    Description : MOSFET N-CH 60V 75A TO-220F
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 4 mOhm @ 25A, 10V
    Vgs(th) (Max) @ Id : 4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 103nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 5494pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 55W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220F
    Package / Case : TO-220-3 Full Pack, Isolated Tab

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