Toshiba Semiconductor and Storage - SSM6L35FU(TE85L,F)

KEY Part #: K6522760

SSM6L35FU(TE85L,F) Pricing (USD) [1105454pcs Stock]

  • 1 pcs$0.03381
  • 3,000 pcs$0.03364
  • 6,000 pcs$0.03177
  • 15,000 pcs$0.02897
  • 30,000 pcs$0.02710
  • 75,000 pcs$0.02430

Part Number:
SSM6L35FU(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N/P-CH 20V 0.18A/0.1A US6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6L35FU(TE85L,F) electronic components. SSM6L35FU(TE85L,F) can be shipped within 24 hours after order. If you have any demands for SSM6L35FU(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6L35FU(TE85L,F) Product Attributes

Part Number : SSM6L35FU(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N/P-CH 20V 0.18A/0.1A US6
Series : -
Part Status : Active
FET Type : N and P-Channel
FET Feature : Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 180mA, 100mA
Rds On (Max) @ Id, Vgs : 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 9.5pF @ 3V
Power - Max : 200mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6

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