APT19F100J Pricing (USD) [3061pcs Stock]
- 1 pcs$14.14918
- 10 pcs$13.08730
- 25 pcs$12.02634
- 100 pcs$11.17744
- 250 pcs$10.25776
- Part Number:
- APT19F100J
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 1000V 20A SOT-227.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT19F100J electronic components. APT19F100J can be shipped within 24 hours after order. If you have any demands for APT19F100J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT19F100J Product Attributes
Part Number :
APT19F100J
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1000V 20A SOT-227
Series :
POWER MOS 8™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
440 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
8500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
460W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
ISOTOP®
Package / Case :
SOT-227-4, miniBLOC
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