BSM180C12P2E202 Pricing (USD) [164pcs Stock]
- 1 pcs$281.91240
- Part Number:
- BSM180C12P2E202
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- BSM180C12P2E202 IS A SIC SILICO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor BSM180C12P2E202 electronic components. BSM180C12P2E202 can be shipped within 24 hours after order. If you have any demands for BSM180C12P2E202, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180C12P2E202 Product Attributes
Part Number :
BSM180C12P2E202
Manufacturer :
Rohm Semiconductor
Description :
BSM180C12P2E202 IS A SIC SILICO
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
204A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1360W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
Module
Package / Case :
Module
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