NTD110N02RT4G Pricing (USD) [184023pcs Stock]
- 1 pcs$0.20200
- 2,500 pcs$0.20099
- Part Number:
- NTD110N02RT4G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 24V 12.5A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTD110N02RT4G electronic components. NTD110N02RT4G can be shipped within 24 hours after order. If you have any demands for NTD110N02RT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTD110N02RT4G Product Attributes
Part Number :
NTD110N02RT4G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 24V 12.5A DPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
24V
Current - Continuous Drain (Id) @ 25°C :
12.5A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3440pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
1.5W (Ta), 110W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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