TK7E80W,S1X Pricing (USD) [32472pcs Stock]
- 1 pcs$1.39702
- 50 pcs$1.06933
- 100 pcs$0.96238
- 500 pcs$0.74851
- 1,000 pcs$0.62019
- Part Number:
- TK7E80W,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 800V 6.5A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK7E80W,S1X electronic components. TK7E80W,S1X can be shipped within 24 hours after order. If you have any demands for TK7E80W,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK7E80W,S1X Product Attributes
Part Number :
TK7E80W,S1X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 800V 6.5A TO220
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
950 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id :
4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
150°C
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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