[2720pcs Stock]
- Part Number:
- RQK0607AQDQS#H1
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Renesas Electronics America RQK0607AQDQS#H1 electronic components. RQK0607AQDQS#H1 can be shipped within 24 hours after order. If you have any demands for RQK0607AQDQS#H1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQK0607AQDQS#H1 Product Attributes
Part Number :
RQK0607AQDQS#H1
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
270 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
2nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1.5W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
UPAK
Package / Case :
TO-243AA
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