Infineon Technologies - IPA80R1K4P7XKSA1

KEY Part #: K6402297

IPA80R1K4P7XKSA1 Pricing (USD) [61527pcs Stock]

  • 1 pcs$0.60206
  • 10 pcs$0.53224
  • 100 pcs$0.42073
  • 500 pcs$0.30865
  • 1,000 pcs$0.24367

Part Number:
IPA80R1K4P7XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 800V 4A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Thyristors - TRIACs and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IPA80R1K4P7XKSA1 electronic components. IPA80R1K4P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA80R1K4P7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA80R1K4P7XKSA1 Product Attributes

Part Number : IPA80R1K4P7XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 800V 4A TO220
Series : CoolMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 250pF @ 500V
FET Feature : Super Junction
Power Dissipation (Max) : 24W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3F
Package / Case : TO-220-3 Full Pack