Diodes Incorporated - DMT3009LFVWQ-13

KEY Part #: K6394133

DMT3009LFVWQ-13 Pricing (USD) [270511pcs Stock]

  • 1 pcs$0.13673

Part Number:
DMT3009LFVWQ-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET BVDSS 25V-30V POWERDI333.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Rectifiers - Single, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Transistors - JFETs and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Diodes Incorporated DMT3009LFVWQ-13 electronic components. DMT3009LFVWQ-13 can be shipped within 24 hours after order. If you have any demands for DMT3009LFVWQ-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT3009LFVWQ-13 Product Attributes

Part Number : DMT3009LFVWQ-13
Manufacturer : Diodes Incorporated
Description : MOSFET BVDSS 25V-30V POWERDI333
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 3.8V, 10V
Rds On (Max) @ Id, Vgs : 11 mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 823pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.3W (Ta), 35.7W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerDI3333-8
Package / Case : 8-PowerVDFN

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