SSM3K35AMFV,L3F Pricing (USD) [2750629pcs Stock]
- 1 pcs$0.01399
- 8,000 pcs$0.01392
- Part Number:
- SSM3K35AMFV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- SMALL LOW ON RESISTANCE MOSFET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3K35AMFV,L3F electronic components. SSM3K35AMFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3K35AMFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K35AMFV,L3F Product Attributes
Part Number :
SSM3K35AMFV,L3F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
SMALL LOW ON RESISTANCE MOSFET
Series :
U-MOSIII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
1.1 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id :
1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
0.34nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
36pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
VESM
Package / Case :
SOT-723
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